Multimodal microscopy of extended defects in β-Ga2O3 (010) EFG crystals

Beta-phase gallium oxide (β-Ga2O3) has attracted attention in recent years as a potentially low cost, large area substrate and active layer material for high power, temperature power electronics sensing devices. However, growth of β-Ga2O3 crystals is complicated by easily activated (100) (001) cleavage planes, the presence angle grain boundaries (LAGBs) twins, potential formation polycrystalline grains. In this study, were grown edge-defined film-fed technique with an (010) principal face. Two apparently randomly formed (HAGBs) selected analyzed electron backscatter diffraction, channeling contrast imaging, cathodoluminescence to investigate nature LAGBs source HAGB formation. It was discovered that planar lying parallel plane exist region immediately preceding start HAGB. Increased misorientation across LAGB observed, approaching initiation new grain. We present multimodal microscopy characterization, correlating variation optoelectronic properties associated dislocations.